Differential multiple-time-programmable memory cells by laterally coupled floating metal gate fin field-effect transistors-Reference-Cited by-同舟云学术

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Differential multiple-time-programmable memory cells by laterally coupled floating metal gate fin field-effect transistors

Published:2017-02-24 Issue:4S Volume:56 Page:04CE03
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hsu Chia-Ling,Liao Chu-Feng,Chien Wei Yu,Chih Yue-Der,Lin Chrong Jung,King Ya-Chin

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/56/i=4S/a=04CE03/pdf

Reference32 articles.

1. High Density MTP Logic NVM for Power Management Applications

2. A 10k-Cycling Reliable 90nm Logic NVM "eCFlash" (Embedded CMOS Flash) Technology

3. A Novel Embedded OTP NVM Using Standard Foundry CMOS Logic Technology

4. Highly Reliable 90-nm Logic Multitime Programmable NVM Cells Using Novel Work-Function-Engineered Tunneling Devices

5. A High-Density MTP Cell With Contact Coupling Gates by Pure CMOS Logic Process

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. FinFET CMOS logic gates with non-volatile states for reconfigurable computing systems;Integration;2019-03

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