Selective Area Heteroepitaxy of p-i-n Junction GaP Nanopillar Arrays on Si (111) by MOCVD-Reference-Cited by-同舟云学术

Selective Area Heteroepitaxy of p-i-n Junction GaP Nanopillar Arrays on Si (111) by MOCVD

Published:2022-08 Issue:4 Volume:58 Page:1-6
ISSN:0018-9197
Container-title:IEEE Journal of Quantum Electronics
language:
Short-container-title:IEEE J. Quantum Electron.

Author:

Choi Wonsik¹,Huang Hsien-Chih¹,Fan Shizhao¹,Mohseni Parsian K.¹,Lee Minjoo Larry¹^ORCID,Li Xiuling²^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, Micro and Nanotechnology Laboratory, University of Illinois at Urbana-Champaign, Urbana, IL, USA

2. Department of Electrical and Computer Engineering, University of Illinois at Urbana-Champaign, Urbana, IL, USA

Funder

National Science Foundation (NSF) through the Division of Materials Research and Electrical, Communications and Cyber Systems

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics

Link

https://ieeexplore.ieee.org/ielam/3/9843922/9714910-aam.pdf

Reference40 articles.

1. Method for Suppression of Stacking Faults in Wurtzite III−V Nanowires

2. Diameter Dependence of the Wurtzite−Zinc Blende Transition in InAs Nanowires

3. Growth kinetics and crystal structure of semiconductor nanowires

4. Effects of Supersaturation on the Crystal Structure of Gold Seeded III−V Nanowires

5. Predicted band structures of III-V semiconductors in the wurtzite phase

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of Defect Formation in Monolithic Integrated GaP Islands on Si Nanotip Wafers;Electronics;2024-07-26

2. Selective Growth of GaP Crystals on CMOS-Compatible Si Nanotip Wafers by Gas Source Molecular Beam Epitaxy;Crystal Growth & Design;2024-03-20

3. Gallium Phosphide Nanowires Grown on SiO₂ by Gas-Source Molecular Beam Epitaxy;Crystal Growth & Design;2023-03-10

4. There Is Plenty of Room All-Around;IEEE Nanotechnology Magazine;2023-02