21.2 mV/K High-Performance Ni(50 nm)-Au(100 nm)/Ga2O3/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics With a Novel Drive Mode-Reference-Cited by-同舟云学术

21.2 mV/K High-Performance Ni_{(50 nm)}-Au_{(100 nm)}/Ga₂O₃/p-Si Vertical MOS Type Diode and the Temperature Sensing Characteristics With a Novel Drive Mode

Published:2022-12-15 Issue:24 Volume:22 Page:23699-23704
ISSN:1530-437X
Container-title:IEEE Sensors Journal
language:
Short-container-title:IEEE Sensors J.

Author:

Cicek Osman¹^ORCID,Arslan Engin²,Altindal Semsettin³,Badali Yosef⁴,Ozbay Ekmel⁵^ORCID

Affiliation:

1. Department of Electrical-Electronic Engineering, Kastamonu University, Kastamonu, Turkey

2. Department of Electrical and Electronics Engineering, Antalya Bilim University, Antalya, Turkey

3. Department of Physics, Faculty of Sciences, Gazi University, Ankara, Turkey

4. Department of Computer Engineering, Istanbul Ticaret University, Istanbul, Turkey

5. Nanotechnology Research Center and the Department of Electrical and Electronics Engineering, Bilkent University, Ankara, Turkey

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Instrumentation

Link

http://xplorestaging.ieee.org/ielx7/7361/9984967/09944651.pdf?arnumber=9944651

Reference24 articles.

1. 1-kV vertical Ga2O3 field-plated Schottky barrier diodes

2. 2300V Reverse Breakdown Voltage Ga2O3Schottky Rectifiers

3. Vertical Geometry, 2-A Forward Current Ga2O3 Schottky Rectifiers on Bulk Ga2O3 Substrates

4. Temperature-Dependent Electrical Characteristics of β-Ga2O3Diodes with W Schottky Contacts up to 500°C

5. Nanocrystalline Diamond Integration with III-Nitride HEMTs

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