Overview of the irradiation-dependent behaviour of the negative dielectric properties of GaAs-based MIS devices-Reference-Cited by-同舟云学术

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Overview of the irradiation-dependent behaviour of the negative dielectric properties of GaAs-based MIS devices

Published:2024-09 Issue: Volume:222 Page:111877
ISSN:0969-806X
Container-title:Radiation Physics and Chemistry
language:en
Short-container-title:Radiation Physics and Chemistry

Author:

Evcin Baydilli Esra,Kaymaz Ahmet^ORCID,Altındal Şemsettin

Publisher

Elsevier BV

Reference61 articles.

1. Dielectric, conductivity and modulus properties of Au/ZnO/p-InP (MOS) capacitor;Acar;ECS Journal of Solid State Science and Technology,2023

2. Frequency dependence of the dielectric properties of Au/(NG:PVP)/n-Si structures;Akbaş;J. Mater. Sci. Mater. Electron.,2021

3. The origin of anomalous peak and negative capacitance on dielectric behavior in the accumulation region in Au/(0.07 Zn-doped polyvinyl alcohol)/n-4H–SiC metal-polymer-semiconductor structures/diodes studied by temperature-dependent impedance measurements;Al-Dharob;J. Phys. Chem. Solid.,2020

4. Comparison of the electrical and impedance properties of Au/(ZnOMn: PVP)/n-Si (MPS) type Schottky-diodes (SDs) before and after gamma-irradiation;Altındal;Phys. Scripta,2021

5. Dielectric properties and negative-capacitance/dielectric in Au/n-Si structures with PVC and (PVC:Sm2O3) interlayer;Altındal;Mater. Sci. Semicond. Process.,2022

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1. The effect of Cu-doping to the DLC interlayer on the temperature dependent current-conduction mechanisms and barrier shape of the Schottky devices;Materials Science in Semiconductor Processing;2024-12

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