Dielectric properties and negative-capacitance/dielectric in Au/n-Si structures with PVC and (PVC:Sm2O3) interlayer

Author:

Altındal Şemsettin,Barkhordari AliORCID,Azizian-Kalandaragh Yashar,Çevrimli Bekir Sıtkı,Mashayekhi Hamid Reza

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference46 articles.

1. MOS (Metal Oxide Semiconductor) Physics and Technology;Nicollian,1982

2. Physics of Semiconductor Devices;Sze,2021

3. Frequency and voltage-dependent electrical parameters, interface traps, and series resistance profile of Au/(NiS: PVP)/n-Si structures;Altındal;J. Mater. Sci. Mater. Electron.,2021

4. A compare study on electrical properties of MS diodes with and without CoFe2O4-PVP interlayer;Uluşan;J. Inorg. Organomet. Polym. Mater.,2021

5. Electrical characterization of Au/n-Si (MS) diode with and without graphene-polyvinylpyrrolidone (GrPVP) interface layer;Altındal;J. Mater. Sci. Mater. Electron.,2021

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