Single Microhole per Pixel in CMOS Image Sensors With Enhanced Optical Sensitivity in Near-Infrared
Author:
Funder
W&WSens Devices
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Instrumentation
Link
http://xplorestaging.ieee.org/ielx7/7361/9395101/09350240.pdf?arnumber=9350240
Cited by 9 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. CMOS Image Sensor With Micro–Nano Holes to Improve NIR Optical Efficiency: Holes on Top Surface Versus on Bottom;IEEE Sensors Journal;2023-09-01
2. High-Sensitivity Photodetectors Based on Silver Nanowires/Silicon Nanopillar Arrays;IEEE Sensors Journal;2023-09-01
3. Single microhole per pixel for thin Ge-on-Si complementary metal-oxide semiconductor image sensor with enhanced sensitivity up to 1700 nm;Journal of Nanophotonics;2023-03-20
4. Efficient surface nano-textured CMOS-compatible photodiodes for Optical Interconnects;Photodetectors;2023
5. Near-Infrared Sensitivity Enhancement of Image Sensor by 2ND-Order Plasmonic Diffraction and the Concept of Resonant-Chamber-Like Pixel;2022 International Electron Devices Meeting (IEDM);2022-12-03
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