Single microhole per pixel for thin Ge-on-Si complementary metal-oxide semiconductor image sensor with enhanced sensitivity up to 1700 nm
Author:
Affiliation:
1. W&Wsens Device, Los Altos, California, United States
2. University of California Davis, Davis, California, United States
Publisher
SPIE-Intl Soc Optical Eng
Subject
Condensed Matter Physics,Electronic, Optical and Magnetic Materials
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1. Deep Trench Isolation and Inverted Pyramid Array Structures Used to Enhance Optical Efficiency of Photodiode in CMOS Image Sensor via Simulations
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Cited by 1 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. CMOS Image Sensor With Micro–Nano Holes to Improve NIR Optical Efficiency: Holes on Top Surface Versus on Bottom;IEEE Sensors Journal;2023-09-01
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