A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET-Reference-Cited by-同舟云学术

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A Physics-Based Analytical Compact Model for the Drift Region of the HV-MOSFET

Published:2011-06 Issue:6 Volume:58 Page:1710-1721
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Bazigos A,Krummenacher F,Sallese J.-M,Bucher M,Seebacher E,Posch W,Molnár K,Mingchun Tang

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/5770363/05741835.pdf?arnumber=5741835

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Characterization and Modeling of 14-/16-nm FinFET-Based LDMOS;IEEE Transactions on Electron Devices;2024-01

2. A Compact Model of High-Voltage MOSFET Based on Electric Field Continuity for Accurate Characterization of Capacitance;IEEE Transactions on Electron Devices;2024-01

3. Robust Compact Model of High-Voltage MOSFET’s Drift Region;IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems;2023-01

4. Recent Enhancements in the Standard BSIM-BULK MOSFET Model;2022 IEEE International Conference on Emerging Electronics (ICEE);2022-12-11

5. A Compact Model Adopting the EKV Model for a Silicon Vertical Power MOSFET;2021 IEEE Applied Power Electronics Conference and Exposition (APEC);2021-06-14

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