Robust Compact Model of High-Voltage MOSFET’s Drift Region-Reference-Cited by-同舟云学术

Robust Compact Model of High-Voltage MOSFET’s Drift Region

Published:2023-01 Issue:1 Volume:42 Page:337-340
ISSN:0278-0070
Container-title:IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems
language:
Short-container-title:IEEE Trans. Comput.-Aided Des. Integr. Circuits Syst.

Author:

Pahwa Girish¹^ORCID,Sharma Ayushi²,Goel Ravi²^ORCID,Gill Garima³^ORCID,Agarwal Harshit³^ORCID,Chauhan Yogesh Singh²^ORCID,Hu Chenming¹^ORCID

Affiliation:

1. Department of Electrical Engineering and Computer Science, University of California at Berkeley, Berkeley, CA, USA

2. Department of Electrical Engineering, Indian Institute of Technology Kanpur, Kanpur, India

3. Department of Electrical Engineering, Indian Institute of Technology Jodhpur, Jodhpur, India

Funder

Berkeley Device Modeling Center

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Software

Link

Reference22 articles.

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