BiCMOS embedded RF-MEMS switch for above 90 GHz applications using backside integration technique-Reference-Cited by-同舟云学术

BiCMOS embedded RF-MEMS switch for above 90 GHz applications using backside integration technique

Published:2010-12 Issue: Volume: Page:
ISSN:
Container-title:2010 International Electron Devices Meeting
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Author:

Kaynak M.¹,Wietstruck M.¹,Scholz R.¹,Drews J.¹,Barth R.¹,Ehwald K. E.¹,Fox A.¹,Haak U.¹,Knoll D.¹,Korndorfer F.¹,Marschmeyer S.¹,Schulz K.¹,Wipf C.¹,Wolansky D.¹,Tillack B.¹,Zoschke K.²,Fischer T.²,Kim Y. S.³,Kim J. S.³,Lee W-G.³,Kim J. W.³

Affiliation:

1. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany

2. Fraunhofer IZM, Gustav-Meyer-Allee 25, 13355 Berlin, Germany

3. National NanoFab Center (NNFC), 305-806 Daejeon, Korea

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5692854/5703218/05703488.pdf?arnumber=5703488

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