BiCMOS embedded RF-MEMS switch for above 90 GHz applications using backside integration technique
Author:
Affiliation:
1. IHP, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany
2. Fraunhofer IZM, Gustav-Meyer-Allee 25, 13355 Berlin, Germany
3. National NanoFab Center (NNFC), 305-806 Daejeon, Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx5/5692854/5703218/05703488.pdf?arnumber=5703488
Cited by 5 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Monolithic Integration of a Wafer-Level Thin-Film Encapsulated mm-Wave RF-MEMS Switch in BEOL of a 130-nm SiGe BiCMOS Technology;IEEE Transactions on Components, Packaging and Manufacturing Technology;2022-06
2. SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers;IET Microwaves, Antennas & Propagation;2015-04
3. SiGe process integrated full‐360° microelectromechanical systems‐based active phase shifter for W‐band automotive radar;IET Microwaves, Antennas & Propagation;2014-08
4. Equivalent circuit model of reliable RF-MEMS switches for component synthesis, fabrication process characterization and failure analysis;International Journal of Microwave and Wireless Technologies;2013-10-15
5. Failure analysis and detection methodology for capacitive RF-MEMS switches based on BEOL BiCMOS process;Microelectronics Reliability;2013-09
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