Equivalent circuit model of reliable RF-MEMS switches for component synthesis, fabrication process characterization and failure analysis
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Published:2013-10-15
Issue:1
Volume:6
Page:73-81
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ISSN:1759-0787
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Container-title:International Journal of Microwave and Wireless Technologies
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language:en
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Short-container-title:Int. j. microw. wirel. technol.
Author:
Torres Matabosch Núria,Coccetti Fabio,Kaynak Mehmet,Espana Beatrice,Tillack Bernd,Cazaux Jean-Louis
Abstract
An accurate and very large band (30–110 GHZ) lumped element equivalent circuit model of capacitive RF-MEMS components based on a standard 250 nm BiCMOS technology is presented. This model is able to predict the effect of the fabrication process dispersion, synthesize new components and monitor the failure mechanisms. Moreover, a reliability study is performed in order to define a screening criterion (VPOUT > 36 V and |VPIN − VPOUT| ≤ 1) based on which a selection of the devices with optimal performance in terms of RF and lifetime performance can be made. Finally, a very quick effective technique (non-intrusive) is proposed to carry out this operation.
Publisher
Cambridge University Press (CUP)
Subject
Electrical and Electronic Engineering
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