SiGe BiCMOS high‐gain and wideband differential intermediate frequency amplifier for W‐band passive imaging single‐chip receivers
Author:
Affiliation:
1. Uppsala University75105UppsalaSweden
2. NED University of Engineering & TechnologyKarachi75270Pakistan
3. Swedish Defence Research Agency (FOI)58330LinköpingSweden
4. IHP GmbH15236Frankfurt (Oder)Germany
Funder
European Commission
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/iet-map.2014.0511
Reference18 articles.
1. Passive Millimeter-Wave Imaging Module With Preamplified Zero-Bias Detection
2. Ultra sensitive ErAs/InAlGaAs direct detectors for millimeter wave and THz imaging applications;Kazemi H.;IEEE MTT‐S Int. Microw. Symp. Dig.,2007
3. Sb-Heterostructure Millimeter-Wave Detectors With Reduced Capacitance and Noise Equivalent Power
4. Design and Analysis of a W-Band SiGe Direct-Detection-Based Passive Imaging Receiver
5. Design and Characterization of $W$-Band SiGe RFICs for Passive Millimeter-Wave Imaging
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3. 5-35 GHz broadband if amplifier section in 0.13 μm SiGe technology for W-band heterodyne receiver RFICs;Microwave and Optical Technology Letters;2015-07-29
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