5-35 GHz broadband if amplifier section in 0.13 μm SiGe technology for W-band heterodyne receiver RFICs

Author:

Reyaz Shakila Bint12,Jonsson Rolf3,Gustafsson Andreas3,Malmqvist Robert13,Strodl Andreas4,Valenta Václav4,Schumacher Hermann4,Kaynak Mehmet5

Affiliation:

1. Uppsala University; Uppsala 751 05 Sweden

2. NED University of Engineering & Technology; Karachi 75270 Pakistan

3. Swedish Defence Research Agency (FOI); Linköping 58330 Sweden

4. Ulm University; Ulm 89081 Germany

5. IHP GmbH; Frankfurt (Oder) 15236 Germany

Funder

European Union

FP7 ICT project NANOTEC

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Reference9 articles.

1. Passive millimeter-wave imaging module with preamplified zero-bias detection;Lynch;IEEE Trans Microwave Theory Tech,2008

2. A BiCMOS W-band 2 × 2 focal-plane array with on-chip antenna;Chen;IEEE J Solid-State Circuits,2012

3. A W-band CMOS receiver chipset for millimeter-wave radiometer systems;Zhou;IEEE J Solid-state Circuits,2011

4. Design and analysis of a W-band SiGe direct-detection-based passive imaging receiver;Gilreath;IEEE J Solid-State Circuits,2011

5. P. Song A.C. Ulusoy R.L. Schmid J.D. Cressler 2014 1 3

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