Two-dimensional quantum mechanical modeling of band-to-band tunneling in indirect semiconductors-Reference-Cited by-同舟云学术

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Two-dimensional quantum mechanical modeling of band-to-band tunneling in indirect semiconductors

Published:2011-12 Issue: Volume: Page:
ISSN:
Container-title:2011 International Electron Devices Meeting
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Author:

Vandenberghe William G.,Soree Bart,Magnus Wim,Fischetti Massimo V.,Verhulst Anne S.,Groeseneken Guido

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/6123666/6131464/06131493.pdf?arnumber=6131493

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Thin-body effects in double-gate tunnel field-effect transistors;Journal of Physics D: Applied Physics;2024-02-29

2. Analog and RF performance optimization for gate all around tunnel FET using broken-gap material;Scientific Reports;2022-10-29

3. A Study on Dominant Mechanism and Analytical Model of Low-Frequency Noise in FD-SOI pTFET;IEEE Journal of the Electron Devices Society;2022

4. Can p-channel tunnel field-effect transistors perform as good as n-channel?;Applied Physics Letters;2014-07-28

5. Calibrated multi-subband Monte Carlo modeling of tunnel-FETs in silicon and III–V channel materials;Solid-State Electronics;2013-10

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