Author:
Revelant A.,Palestri P.,Osgnach P.,Selmi L.
Subject
Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials
Reference30 articles.
1. Synopsys Sentaurus TCAD Sdevice 2010. 12E User’s Manual; 2010. See Eqs. (385)–(388), (392) and (393).
2. Double-gate tunnel FET with high-κ; gate dielectric;Boucart;IEEE TED,2007
3. Lateral strain profile as key technology booster for all-silicon tunnel FETs;Boucart;IEEE EDL,2009
4. Conzatti F, Pala M, Esseni D, Bano E, Selmi L. A simulation study of strain induced performance enhancements in InAs nanowire tunnel-FETs. In: Proc. IEDM; 2011. p. 95.
5. D’Amico P, Marconcini P, Fiori G, Iannaccone G. Interband tunneling in nanowires with diamond cubic or zincblende crystalline structure based on atomistic modeling; 2012. arXiv:cond-mat/12014100v1.
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