A Comparative Study of GaP/SiGe Hetero Junction Double Gate Tunnel Field Effect Transistor-Reference-Cited by-同舟云学术

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A Comparative Study of GaP/SiGe Hetero Junction Double Gate Tunnel Field Effect Transistor

Published:2017-12 Issue: Volume: Page:
ISSN:
Container-title:2017 IEEE International Symposium on Nanoelectronic and Information Systems (iNIS)
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Author:

Yadav Dharmendra Singh,Sharma Dheeraj,Tirkey Sukeshni,Soni Deepak,Sharma Deepak G.,Bajpai Shriya,Sharma Neeraj

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8293729/8293882/08293929.pdf?arnumber=8293929

Cited by 8 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Assessment of temperature and ITCs on single gate L-shaped tunnel FET for low power high frequency application;Engineering Research Express;2024-03-01

2. Analysis of Channel Doping Variation on Transfer Characteristics to High Frequency Performance of F‐TFET;Advanced Ultra Low‐Power Semiconductor Devices;2023-10-27

3. Comprehensive Analysis of DG-TFET with Ferro Electric Material;2023 7th International Conference on Computing Methodologies and Communication (ICCMC);2023-02-23

4. Impact of work function variation for enhanced electrostatic control with suppressed ambipolar behavior for dual gate L-TFET;Current Applied Physics;2022-12

5. Performance Analysis of Hetero Gate Oxide with Work Function Engineering Based SC-TFET with Impact of ITCs;Silicon;2022-04-11

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