Can p-channel tunnel field-effect transistors perform as good as n-channel?-Reference-Cited by-同舟云学术

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Can p-channel tunnel field-effect transistors perform as good as n-channel?

Published:2014-07-28 Issue:4 Volume:105 Page:043103
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Verhulst A. S.,Verreck D.,Pourghaderi M. A.,Van de Put M.,Sorée B.,Groeseneken G.,Collaert N.,Thean A. V.-Y.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4891348

Reference23 articles.

1. Low-Voltage Tunnel Transistors for Beyond CMOS Logic

2. Tunnel field-effect transistors as energy-efficient electronic switches

3. Figure of merit for and identification of sub-60 mV/decade devices

4. Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates

5. Quantum Mechanical Performance Predictions of p-n-i-n Versus Pocketed Line Tunnel Field-Effect Transistors

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Heterojunction Tunnel Field-Effect Transistors;Springer Handbook of Semiconductor Devices;2022-11-11

2. Effect of Step Gate Work Function on InGaAs p-TFET for Low Power Switching Applications;Nanomaterials;2021-11-23

3. Phonon-assisted tunneling in direct-bandgap semiconductors;Journal of Applied Physics;2019-01-07

4. Tunnel FET;Nanoelectronics;2019

5. Modelling doping design in nanowire tunnel-FETs based on group-IV semiconductors;Materials Science in Semiconductor Processing;2017-05

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