Phonon-assisted tunneling in direct-bandgap semiconductors-Reference-Cited by-同舟云学术

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Phonon-assisted tunneling in direct-bandgap semiconductors

Published:2019-01-07 Issue:1 Volume:125 Page:015701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Mohammed Mazharuddin¹²,Verhulst Anne S.¹,Verreck Devin¹^ORCID,Van de Put Maarten L.³^ORCID,Magnus Wim¹⁴,Sorée Bart¹²⁴,Groeseneken Guido¹²

Affiliation:

1. Imec, Kapeldreef 75, 3001 Leuven, Belgium

2. Department of Electrical Engineering, KU Leuven, 3001 Leuven, Belgium

3. Department of Materials Science and Engineering, The University of Texas at Dallas, Dallas, Texas 75080, USA

4. Department of Physics, Universiteit Antwerpen, 2020 Antwerpen, Belgium

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5044256

Reference32 articles.

1. Tunnel Field-Effect Transistors: State-of-the-Art

2. Tunnel field-effect transistors as energy-efficient electronic switches

3. On the Possibility of Obtaining MOSFET-Like Performance and Sub-60-mV/dec Swing in 1-D Broken-Gap Tunnel Transistors

4. Fabrication, Characterization, and Analysis of Ge/GeSn Heterojunction p-Type Tunnel Transistors

5. Uniform Strain in Heterostructure Tunnel Field-Effect Transistors

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. AlGaAs Tunnel Junction (TJ)-VCSELs: A NEGF–Drift-Diffusion Approach;IEEE Photonics Journal;2024-04

2. Analysis of Carrier Transport in Tunnel-Junction Vertical-Cavity Surface-Emitting Lasers by a Coupled Nonequilibrium Green’s Function–Drift-Diffusion Approach;Physical Review Applied;2020-08-14

3. Investigation of Current-Driven Degradation of 1.3 μm Quantum-Dot Lasers Epitaxially Grown on Silicon;IEEE Journal of Selected Topics in Quantum Electronics;2020-03

4. Large Variation in Temperature Dependence of Band-to-Band Tunneling Current in Tunnel Devices;IEEE Electron Device Letters;2019-11

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