High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy-Reference-Cited by-同舟云学术

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High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy

Published:2018-12 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Electron Devices Meeting (IEDM)
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Author:

Lee S.,Cheng C. -W.,Sun X.,D'Emic C.,Miyazoe H.,Frank M. M.,Lofaro M.,Bruley J.,Hashemi P.,Ott J. A.,Ando T.,Spratt W.,Cohen G. M.,Lavoie C.,Bruce R.,Patel J.,Schmid H.,Czornomaz L.,Narayanan V.,Mo R.T.,Leobandung E.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8601505/8614478/08614684.pdf?arnumber=8614684

Cited by 10 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. A Critical Overview on Technological Progress in Nanosheets;2024 Second International Conference on Emerging Trends in Information Technology and Engineering (ICETITE);2024-02-22

3. Review: III–V infrared emitters on Si: fabrication concepts, device architectures and down-scaling with a focus on template-assisted selective epitaxy;Semiconductor Science and Technology;2023-04-11

4. Photodetector Based on Twisted Bilayer Graphene/Silicon Hybrid Slot Waveguide with High Responsivity and Large Bandwidth;Photonics;2022-11-17

5. In_0.53Ga_0.47As Nanosheet MOSFETs with Self-Heating Effects;2022 IEEE Silchar Subsection Conference (SILCON);2022-11-04

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