In<sub>0.53</sub>Ga<sub>0.47</sub>As Nanosheet MOSFETs with Self-Heating Effects-Reference-Cited by-同舟云学术

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In_0.53Ga_0.47As Nanosheet MOSFETs with Self-Heating Effects

Published:2022-11-04 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Silchar Subsection Conference (SILCON)
language:
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Author:

Srinivas P. S. T. N.¹,Kumar Arun²,Tiwari Pramod Kumar¹

Affiliation:

1. Indian Institute of Technology Patna,EE Department,Patna,India

2. National Institute of Technology,ECE Department,Silchar,Assam,India

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10028779/10028780/10028932.pdf?arnumber=10028932

Reference19 articles.

1. High Performance InGaAs Gate-All-Around Nanosheet FET on Si Using Template Assisted Selective Epitaxy

2. Version O-2018.06;sentaurus,2018

3. Measurements of the Thermal Resistivity of InAlAs, InGaAs, and InAlAs/InGaAs Superlattices

4. Impact of Self-Heating on Linearity Performance of In0.53Ga0.47As based Gate-All-Around MOSFETs

5. Nonparabolic Multivalley Quantum Correction Model for InGaAs Double-Gate Structures

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