Strained Germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement Fin process-Reference-Cited by-同舟云学术

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Strained Germanium quantum well pMOS FinFETs fabricated on in situ phosphorus-doped SiGe strain relaxed buffer layers using a replacement Fin process

Published:2013-12 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Electron Devices Meeting
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Author:

Witters L.,Mitard J.,Loo R.,Eneman G.,Mertens H.,Brunco D. P.,Lee S. H.,Waldron N.,Hikavyy A.,Favia P.,Milenin A. P.,Shimura Y.,Vrancken C.,Bender H.,Horiguchi N.,Barla K.,Thean A.,Collaert N.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6709840/6724533/06724669.pdf?arnumber=6724669

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Negative Bias-Temperature Instabilities and Low-Frequency Noise in Ge FinFETs;IEEE Transactions on Device and Materials Reliability;2023-03

2. Strained Si Nanosheet pFET Based on SiC Strain Relaxed Buffer Layer for High Performance and Low Power Logic Applications;IEEE Access;2023

3. Negative-Bias-Stress and Total-Ionizing-Dose Effects in Deeply Scaled Ge-GAA Nanowire pFETs;IEEE Transactions on Nuclear Science;2022-03

4. A novel three-layer graded SiGe strain relaxed buffer for the high crystal quality and strained Si0.5Ge0.5 layer epitaxial grown;Journal of Materials Science: Materials in Electronics;2019-07-02

5. Relationship of Channel and Surface Orientation to Mechanical and Electrical Stresses on N-Type FinFETs;IEICE Transactions on Electronics;2019-06-01

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