Relationship of Channel and Surface Orientation to Mechanical and Electrical Stresses on N-Type FinFETs-Reference-Cited by-同舟云学术

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Relationship of Channel and Surface Orientation to Mechanical and Electrical Stresses on N-Type FinFETs

Published:2019-06-01 Issue:6 Volume:E102.C Page:429-434
ISSN:0916-8524
Container-title:IEICE Transactions on Electronics
language:en
Short-container-title:IEICE Trans. Electron.

Author:

CHANG Wen-Teng¹,LIN Shih-Wei¹,CHEN Min-Cheng²,YEH Wen-Kuan²

Affiliation:

1. National University of Kaohsiung

2. National Nano Device Laboratories

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

https://www.jstage.jst.go.jp/article/transele/E102.C/6/E102.C_2018FUP0006/_pdf

Reference38 articles.

1. [1] J.H. Stathis and S. Zafar, “The negative bias temperature instability in MOS devices: A review,” Microelectron. Reliab., vol.46, no.2-4, pp.270-286, 2006. DOI: 10.1016/j.microrel.2005.08.001 10.1016/j.microrel.2005.08.001

2. [2] A.N. Tallarico, M. Cho, J. Franco, R. Ritzenthaler, M. Togo, N. Horiguchi, G. Groeseneken, and F. Crupi, “Impact of the substrate orientation on CHC reliability in n-FinFETs — separation of the various contributions,” IEEE Trans. Device Mater. Rel., vol.14, no.1, pp.52-56, 2014. DOI: 10.1109/tdmr.2013.2271705 10.1109/tdmr.2013.2271705

3. [3] S.-Y. Kim and J.H. Lee, “Hot carrier-induced degradation in bulk FinFETs,” IEEE Electron Device Lett., vol.26, no.8, pp.566-568, 2005. DOI: 10.1109/led.2005.852534 10.1109/led.2005.852534

4. [4] D.K. Schroder, “Negative bias temperature instability: What do we understand?,” Microelectron. Reliab., vol.47, no.6, pp.841-852, 2007. DOI: 10.1016/j.microrel.2006.10.006 10.1016/j.microrel.2006.10.006

5. [5] C.D. Young, K. Akarvardar, G. Bersuker, I. Ok, T. Ngai, K.-W.Ang, C. Hobbs, P. Kirsch, and R. Jammy, “(110) and (100) sidewall-oriented FinFETs: A performance and reliability investigation,” Solid-State Electron., vol.78, pp.2-10, 2012. DOI: 10.1016/j.sse.2012.05.045

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