20-nm-Node trench-gate-self-aligned crystalline In-Ga-Zn-Oxide FET with high frequency and low off-state current-Reference-Cited by-同舟云学术

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20-nm-Node trench-gate-self-aligned crystalline In-Ga-Zn-Oxide FET with high frequency and low off-state current

Published:2015-12 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE International Electron Devices Meeting (IEDM)
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Author:

Matsubayashi D.,Asami Y.,Okazaki Y.,Kurata M.,Sasagawa S.,Okamoto S.,Iikubo Y.,Sato T.,Yakubo Y.,Honda R.,Tsubuku M.,Fujita M.,Takeuchi T.,Yamamoto Y.,Yamazaki S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7402013/7409598/07409641.pdf?arnumber=7409641

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4. Low Ohmic contact resistance and high on/off ratio in transition metal dichalcogenides field-effect transistors via residue-free transfer;Nature Nanotechnology;2023-09-04

5. Monolithically Stacked Two Layers of a-IGZO-Based Transistors Upon a-IGZO-Based Analog/Logic Circuits;IEEE Transactions on Electron Devices;2023-04

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