Demonstration of In<inf>0.9</inf>Ga<inf>0.1</inf>As/GaAs<inf>0.18</inf>Sb<inf>0.82</inf> near broken-gap tunnel FET with I<inf>ON</inf>=740μA/μm, G<inf>M</inf>=70μS/μm and gigahertz switching performance at V<inf>Ds</inf>=0.5V-Reference-Cited by-同舟云学术

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Demonstration of In0.9Ga0.1As/GaAs0.18Sb0.82 near broken-gap tunnel FET with ION=740μA/μm, GM=70μS/μm and gigahertz switching performance at VDs=0.5V

Published:2013-12 Issue: Volume: Page:
ISSN:
Container-title:2013 IEEE International Electron Devices Meeting
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Author:

Bijesh R.,Liu H.,Madan H.,Mohata D.,Li W.,Nguyen N. V,Gundlach D.,Richter C. A.,Maier J.,Wang K.,Clarke T.,Fastenau J. M.,Loubychev D.,Liu W. K.,Narayanan V,Datta S.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6709840/6724533/06724708.pdf?arnumber=6724708

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