Systematic optimization of 1 Gbit perpendicular magnetic tunnel junction arrays for 28 nm embedded STT-MRAM and beyond-Reference-Cited by-同舟云学术

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Systematic optimization of 1 Gbit perpendicular magnetic tunnel junction arrays for 28 nm embedded STT-MRAM and beyond

Published:2015-12 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE International Electron Devices Meeting (IEDM)
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Author:

Park C.,Kan J. J.,Ching C.,Ahn J.,Xue L.,Wang R.,Kontos A.,Liang S.,Bangar M.,Chen H.,Hassan S.,Gottwald M.,Zhu X.,Pakala M.,Kang S. H.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7402013/7409598/07409771.pdf?arnumber=7409771

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electric-field control of nonvolatile resistance state of perpendicular magnetic tunnel junction via magnetoelectric coupling;Science Advances;2024-04-19

2. Effects of Buffer and Capping Layers on Thermal Stability of CoFeB/MgO Frames at Various Temperatures;Applied Sciences;2024-03-12

3. RHS-TRNG: A Resilient High-Speed True Random Number Generator Based on STT-MTJ Device;IEEE Transactions on Very Large Scale Integration (VLSI) Systems;2023-10

4. In-Memory Computing for Machine Learning and Deep Learning;IEEE Journal of the Electron Devices Society;2023

5. Performance-based comparative study of existing and emerging non-volatile memories: a review;Journal of Optics;2022-12-23

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