Electric-field control of nonvolatile resistance state of perpendicular magnetic tunnel junction via magnetoelectric coupling-Reference-Cited by-同舟云学术

Electric-field control of nonvolatile resistance state of perpendicular magnetic tunnel junction via magnetoelectric coupling

Published:2024-04-19 Issue:16 Volume:10 Page:
ISSN:2375-2548
Container-title:Science Advances
language:en
Short-container-title:Sci. Adv.

Author:

Zhang Yike¹²^ORCID,Sun Weideng¹²^ORCID,Cao Kaihua³,Yang Xiao-Xue⁴^ORCID,Yang Yongqiang⁵⁶^ORCID,Lu Shiyang³,Du Ao³,Hu Chaoqun⁷⁸,Feng Ce¹²^ORCID,Wang Yutong¹²,Cai Jianwang⁷⁸^ORCID,Cui Baoshan⁹,Piao Hong-Guang⁴^ORCID,Zhao Weisheng³^ORCID,Zhao Yonggang¹²^ORCID

Affiliation:

1. Department of Physics and State Key Laboratory of Low-Dimensional Quantum Physics, Tsinghua University, Beijing 100084, China.

2. Frontier Science Center for Quantum Information, Tsinghua University, Beijing 100084, China.

3. Fert Beijing Institute, School of Integrated Science and Engineering, Beihang University, Beijing 100191, China.

4. Department of Physics, Yanbian University, Yanji 133002, China.

5. Faculty of Physics and Electronic Science, Hubei University, Wuhan 430062, China.

6. Songshan Lake Materials Laboratory, Dongguan, Guangdong 523808, China.

7. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100190, China.

8. School of Physical Sciences, University of Chinese Academy of Sciences, Beijing 100049, China.

9. Key Laboratory for Magnetism and Magnetic Materials of Ministry of Education, Lanzhou University, Lanzhou 730000, China.

Abstract

Magnetic tunnel junctions (MTJs) are the core elements of spintronic devices. Now, the mainstream writing operation of MTJs mainly relies on electric current with high energy dissipation, which can be greatly reduced if an electric field is used instead. In this regard, strain-mediated multiferroic heterostructure composed of MTJ and ferroelectrics are promising with the advantages of room temperature and magnetic field–free as already demonstrated by MTJ with in-plane magnetic anisotropy. However, there is no such report on the perpendicular MTJs (p-MTJs), which have been commercialized. Here, we investigate electric-field control of resistance state of MgO-based p-MTJs in multiferroic heterostructures. A remarkable and nonvolatile manipulation of resistance is demonstrated at room temperature without magnetic field assistance. Through various characterizations and micromagnetic simulation, the manipulation mechanism is uncovered. Our work provides an effective avenue for manipulating p-MTJ resistance by electric fields and is notable for high density and ultralow power spintronic devices.

Publisher

American Association for the Advancement of Science (AAAS)

Link

https://www.science.org/doi/pdf/10.1126/sciadv.adl4633

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