Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM-Reference-Cited by-同舟云学术

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Solving the paradox of the inconsistent size dependence of thermal stability at device and chip-level in perpendicular STT-MRAM

Published:2015-12 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE International Electron Devices Meeting (IEDM)
language:
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Author:

Thomas Luc,Jan Guenole,Le Son,Lee Yuan-Jen,Liu Huanlong,Zhu Jian,Serrano-Guisan Santiago,Tong Ru-Ying,Pi Keyu,Shen Dongna,He Renren,Haq Jesmin,Teng Zhongjian,Annapragada Rao,Lam Vinh,Wang Yu-Jen,Zhong Tom,Torng Terry,Wang Po-Kang

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7402013/7409598/07409773.pdf?arnumber=7409773

Cited by 23 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A quantum sensing metrology for magnetic memories;npj Spintronics;2024-06-03

2. Effects of Buffer and Capping Layers on Thermal Stability of CoFeB/MgO Frames at Various Temperatures;Applied Sciences;2024-03-12

3. Modeling Methodology for Thermal Stability Factor in Spin Transfer Torque Magneto-Resistive Random Access Memories;IEEE Transactions on Electron Devices;2024-03

4. Thermal stability of non-collinear antiferromagnetic Mn3Sn nanodot;Applied Physics Letters;2023-03-20

5. Write-error-rate of Spin-Transfer-Torque MRAM (Invited);2023 IEEE International Reliability Physics Symposium (IRPS);2023-03

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