A forming-free WO<inf>x</inf> resistive memory using a novel self-aligned field enhancement feature with excellent reliability and scalability-Reference-Cited by-同舟云学术

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A forming-free WOx resistive memory using a novel self-aligned field enhancement feature with excellent reliability and scalability

Published:2010-12 Issue: Volume: Page:
ISSN:
Container-title:2010 International Electron Devices Meeting
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Author:

Chien W.C.,Chen Y.R.,Chen Y.C.,Chuang Alfred T.H.,Lee F.M.,Lin Y.Y.,Lai E.K.,Shih Y.H.,Hsieh K.Y.,Chih-Yuan Lu

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5692854/5703218/05703390.pdf?arnumber=5703390

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