1D Atomic Defect Tunnel Structure of Oxygen‐Deficient Tungsten Oxide Epitaxial Films and Its Redox Device Applications

Author:

Kim Gowoon1ORCID,Ohta Hiromichi2ORCID

Affiliation:

1. Graduate School of Information Science and Technology Hokkaido University Sapporo 060-0814 Japan

2. Research Institute for Electronic Science Hokkaido University Sapporo 001-0020 Japan

Funder

Japan Society for the Promotion of Science

Publisher

Wiley

Subject

Materials Chemistry,Electrical and Electronic Engineering,Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference71 articles.

1. W.Chien Y.Chen Y.Chen A. T.Chuang F.Lee Y.Lin E.Lai Y.Shih K.Hsieh C.-Y.Lu presented at2010 Int. Electron Devices Meeting San Francisco CA2010.

2. Flexible Nanoporous WO3–x Nonvolatile Memory Device

3. W.Chien F.Lee Y.Lin M.Lee S.Chen C.Hsieh E.Lai H.Hui Y.Huang C.Yu presented at2012 Symp. on VLSI technology (VLSIT) Honolulu HI2012.

4. Fast operation of a WO3-based solid-state electrochromic transistor

5. Electrochromic tungsten oxide films: Review of progress 1993–1998

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