Si, SiC and GaN power devices: An unbiased view on key performance indicators-Reference-Cited by-同舟云学术

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Si, SiC and GaN power devices: An unbiased view on key performance indicators

Published:2016-12 Issue: Volume: Page:
ISSN:
Container-title:2016 IEEE International Electron Devices Meeting (IEDM)
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Author:

Deboy G.,Treu M.,Haeberlen O.,Neumayr D.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7824662/7838021/07838458.pdf?arnumber=7838458

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. SiC Fin-Channel MOSFET for Enhanced Gate Shielding Effect;Electronics;2024-04-28

2. Time Variable Dead-Time in GaN Based Bridgeless Converter;2023 Photonics & Electromagnetics Research Symposium (PIERS);2023-07-03

3. In Situ H-Radical Surface Treatment on Aluminum Gallium Nitride for High-Performance Aluminum Gallium Nitride/Gallium Nitride MIS-HEMTs Fabrication;Micromachines;2023-06-21

4. Strain Engineering in Modern Si Trench Power MOSFETs — A Performance Booster for Future Generations;2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD);2023-05-28

5. Simple Radiated Noise Estimation Based on Datasets of SiC and Si IPMs for Inverter Use;2023 IEEE Applied Power Electronics Conference and Exposition (APEC);2023-03-19

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