Engineered substrates for future More Moore and More than Moore integrated devices-Reference-Cited by-同舟云学术

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Engineered substrates for future More Moore and More than Moore integrated devices

Published:2010-12 Issue: Volume: Page:
ISSN:
Container-title:2010 International Electron Devices Meeting
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Author:

Clavelier L.,Deguet C.,Di Cioccio L.,Augendre E.,Brugere A.,Gueguen P.,Le Tiec Y.,Moriceau H.,Rabarot M.,Signamarcheix T.,Widiez J.,Faynot O.,Andrieu F.,Weber O.,Le Royer C.,Batude P.,Hutin L.,Damlencourt J-F.,Deleonibus S.,Defay E.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5692854/5703218/05703285.pdf?arnumber=5703285

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Heterogeneous integration of 2D materials on Si charge-coupled devices as optical memory;Science China Information Sciences;2024-04-26

2. Thermo-electro-mechanical Effects of Copper TSV Interconnects on the MOS Characteristics in Stacked 3D Integration;Lecture Notes in Networks and Systems;2024

3. Investigation of the Electrical Coupling Effect for Monolithic 3-Dimensional Nonvolatile Memory Consisting of a Feedback Field-Effect Transistor Using TCAD;Micromachines;2023-09-23

4. From 32 nm to TFET Technology: New Perspectives for Ultra-Scaled RF-DC Multiplier Circuits;Electronics;2022-02-10

5. Electrical Coupling of Monolithic 3D Inverters (M3INVs): MOSFET and Junctionless FET;Applied Sciences;2020-12-30

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