Physics of hole trapping process in high-k gate stacks: A direct simulation formalism for the whole interface system combining density-functional theory and Marcus theory-Reference-Cited by-同舟云学术

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Physics of hole trapping process in high-k gate stacks: A direct simulation formalism for the whole interface system combining density-functional theory and Marcus theory

Published:2018-12 Issue: Volume: Page:
ISSN:
Container-title:2018 IEEE International Electron Devices Meeting (IEDM)
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Author:

Liu Yue-Yang,Jiang Xiangwei

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8601505/8614478/08614672.pdf?arnumber=8614672

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