State-of-the-art device in high voltage power ICs with lowest on-state resistance-Reference-Cited by-同舟云学术

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State-of-the-art device in high voltage power ICs with lowest on-state resistance

Published:2010-12 Issue: Volume: Page:
ISSN:
Container-title:2010 International Electron Devices Meeting
language:
Short-container-title:

Author:

Su R.Y.,Yang F. J.,Tsay J. L.,Cheng C. C.,Liou R. S.,Tuan H. C.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5692854/5703218/05703403.pdf?arnumber=5703403

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. An Ultra-Fast and Precise Automatic Design Framework for Predicting and Constructing High-Performance Shallow-Trench-Isolation LDMOS Device;2024-07-31

2. Novel Bulk Homogenization Field Devices With Reducing Process Difficulty;IEEE Electron Device Letters;2024-07

3. 4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance;Micromachines;2023-04-27

4. Anomalous output characteristic shift for the n-type lateral diffused metal-oxide-semiconductor transistor with floating P-top layer;Applied Physics Letters;2014-04-14

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