Novel Bulk Homogenization Field Devices With Reducing Process Difficulty
Author:
Affiliation:
1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, China
2. Technology Development Department, CSMC Technologies Corporation, Wuxi, China
Funder
National Natural Science Foundation of China
National Laboratory of Science and Technology on Analog Integrated Circuit
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Link
http://xplorestaging.ieee.org/ielx7/55/10577506/10536889.pdf?arnumber=10536889
Reference28 articles.
1. A new 800 V lateral MOSFET with dual conduction paths
2. Double-RESURF 700 V n-channel LDMOS with best-in-class on-resistance
3. Design and optimization of double-resurf high-voltage lateral devices for a manufacturable process
4. A Versatile 600V BCD Process for High Voltage Applications
5. 700V Lateral DMOS with New Source Fingertip Design
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