4H-SiC LDMOS Integrating a Trench MOS Channel Diode for Improved Reverse Recovery Performance
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Published:2023-04-27
Issue:5
Volume:14
Page:950
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ISSN:2072-666X
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Container-title:Micromachines
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language:en
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Short-container-title:Micromachines
Author:
Liu Yanjuan1, Jia Dezhen1, Fang Junpeng2
Affiliation:
1. College of Electronic and Information Engineering, Shenyang Aerospace University, Shenyang 110136, China 2. School of Integrated Circuits, Tsinghua University, Beijing 100084, China
Abstract
In this paper, a 4H-SiC lateral gate MOSFET incorporating a trench MOS channel diode at the source side is explored to improve the reverse recovery characteristics. In addition, a 2D numerical simulator (ATLAS) is used to investigate the electrical characteristics of the devices. The investigational results have demonstrated that the peak reverse recovery current is reduced by 63.5%, the reverse recovery charge is reduced by 24.5%, and the reverse recovery energy loss is decreased by 25.8%, with extra complexity in the fabrication process.
Funder
Project of Liaoning Provincial Department of Education Natural Science Foundation of Liaoning Province Shenyang Aerospace University
Subject
Electrical and Electronic Engineering,Mechanical Engineering,Control and Systems Engineering
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