150 GHz FMAX with high drain breakdown voltage immunity by multi gate oxide dual work-function (MGO-DWF)-MO SFET-Reference-Cited by-同舟云学术

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150 GHz FMAX with high drain breakdown voltage immunity by multi gate oxide dual work-function (MGO-DWF)-MO SFET

Published:2015-12 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE International Electron Devices Meeting (IEDM)
language:
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Author:

Miyata T.,Tanaka H.,Kagimoto K.,Kamiyashiki M.,Kamimura M.,Hidaka A.,Goto M.,Adachi K.,Hokazono A.,Ohguro T.,Nagaoka K.,Watanabe Y.,Hirooka S.,Ito Y.,Kawanaka S.,Ishimaru K.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7402013/7409598/07409769.pdf?arnumber=7409769

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A drain extended FinFET with enhanced DC/RF performance for high-voltage RF applications;Semiconductor Science and Technology;2022-10-05

2. An Island Drain Double-Gate DeMOS With Self-Aligned Sub-Gate to Achieve Multifold Transient Frequency Enhancement;IEEE Transactions on Electron Devices;2022-09

3. A FinFET Design for Superior High-Voltage Performance;2022 IEEE 22nd International Conference on Nanotechnology (NANO);2022-07-04

4. A mmWave Switch Using Novel Back-End-Of-Line (BEOL) in 22nm FinFET Technology;2021 IEEE MTT-S International Microwave Symposium (IMS);2021-06-07

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