Super steep subthreshold slope PN-body tied SOI FET with ultra low drain voltage down to 0.1V-Reference-Cited by-同舟云学术

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Super steep subthreshold slope PN-body tied SOI FET with ultra low drain voltage down to 0.1V

Published:2015-12 Issue: Volume: Page:
ISSN:
Container-title:2015 IEEE International Electron Devices Meeting (IEDM)
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Author:

Ida Jiro,Mori Takayuki,Kuramoto Yousuke,Horii Takashi,Yoshida Takahiro,Takeda Kazuma,Kasai Hiroki,Okihara Masao,Arai Yasuo

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7402013/7409598/07409761.pdf?arnumber=7409761

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. New Steep Subthreshold Slope Device “Gate-Controlled Carrier-Injection SOI-Transistor”;2024 8th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2024-03-03

2. Steep subthreshold slope “Dual-gate PN-body tied SOI-FET” – First fabrication results –;Solid-State Electronics;2023-09

3. Sharp Turn-on Diode by Steep SS “PN-Body Tied SOI FET” for Ultra-low Power RF Energy Harvesting;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07

4. Origin of Hump in Ids for Body-Tied SOI-MOSFET and Its Influence on Circuit Performance;Lecture Notes in Electrical Engineering;2023

5. Transient Characteristics on Super-Steep Subthreshold Slope “PN-Body Tied SOI-FET” — Simulation and Pulse Measurement —;IEICE Transactions on Electronics;2020-10-01

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