Transient Characteristics on Super-Steep Subthreshold Slope “PN-Body Tied SOI-FET” — Simulation and Pulse Measurement —

Author:

MORI Takayuki1,IDA Jiro1,ENDO Hiroki1

Affiliation:

1. Division of Electrical Engineering, Kanazawa Institute of Technology

Publisher

Institute of Electronics, Information and Communications Engineers (IEICE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Reference32 articles.

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3. [3] A.M. Ionescu and H. Riel, “Tunnel field-effect transistors as energy-efficient electronic switches,” Nature, vol.479, pp.329-337, Nov. 2011. doi: 10.1038/nature10679. 10.1038/nature10679

4. [4] T. Mori, H. Asai, J. Hattori, K. Fukuda, S. Otsuka, Y. Morita, S. O'uchi, H. Fuketa, S. Migita, W. Mizubayashi, H. Ota, and T.Matsukawa, “Demonstrating performance improvement of complementary TFET circuits by Ion enhancement based on isoelectronic trap technology,” 2016 IEEE Int. Electron Devices Meet., San Francisco, CA, pp.19.4.1-19.4.4, 2016. doi: 10.1109/ IEDM.2016.7838453. 10.1109/iedm.2016.7838453

5. [5] S. Salahuddin and S. Datta, “Use of negative capacitance to provide voltage amplification for low-power nanoscale devices,” Nano Lett., vol.8, no.2, pp.405-410, Dec. 2007. doi: 10.1021/nl071804g. 10.1021/nl071804g

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