Origin of Hump in Ids for Body-Tied SOI-MOSFET and Its Influence on Circuit Performance-Reference-Cited by-同舟云学术

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Origin of Hump in Ids for Body-Tied SOI-MOSFET and Its Influence on Circuit Performance

Published:2023 Issue: Volume: Page:445-453
ISSN:1876-1100
Container-title:Lecture Notes in Electrical Engineering
language:
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Author:

Iizuka T.^ORCID,Miura-Mattausch M.^ORCID,Kikuchihara H.,Ghosh S.^ORCID

Publisher

Springer Nature Singapore

Link

https://link.springer.com/content/pdf/10.1007/978-981-99-0055-8_37

Reference4 articles.

1. Lu Z et al (2010) Realizing super-steep subthreshold slope with conventional FDSOI CMOS at low-bias voltages. In: 2010 international electron devices meeting. IEEE, Piscataway, NJ, pp 16.6.1–16.6.3

2. Ida J et al (2015) Super steep subthreshold slope PN-body tied SOI FET with ultra low drain voltage down to 0.1 V. In: 2015 IEEE international electron devices meeting (IEDM). IEEE, Piscataway, NJ, pp 22.7.1–22.7.4

3. ATLAS, Silvaco Inc.

4. HiSIM_SOI webpage. https://hisim.hiroshima-u.ac.jp/cgi/HiSIM_SOI/public_release.cgi. Accessed 2022/2/7

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