GaN-based semiconductor devices for future power switching systems
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/7824662/7838021/07838460.pdf?arnumber=7838460
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Epitaxial growth of 1D GaN-based heterostructures on various substrates for photonic and energy applications;Nanoscale Advances;2023
2. The calculation for quantized valence subband structure of zinc-blende GaN heterojunction quantum well based on k·p method;Semiconductor Science and Technology;2021-11-03
3. Defect-free interface between amorphous (Al2O3)1−x(SiO2)x and GaN(0001) revealed by first-principles simulated annealing technique;Applied Physics Letters;2021-07-05
4. GaN-Based DC-DC Resonant Boost Converter with Very High Efficiency and Voltage Gain Control;Energies;2020-12-03
5. Drain current enhancement induced by hole injection from gate of 600-V-class normally off gate injection transistor under high temperature conditions up to 200 °C;Japanese Journal of Applied Physics;2018-05-16
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