Defect-free interface between amorphous (Al2O3)1−x(SiO2)x and GaN(0001) revealed by first-principles simulated annealing technique
Author:
Affiliation:
1. Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8601, Japan
2. Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan
Funder
MEXT “Program for Research and Development of Next-Generation Semiconductors to Realize an Energy-Saving Society”
MEXT “Program for Creation of Innovative Core Technology for Power Electronics”
MEXT “Program for Research on the Supercomputer Fugaku”
JSPS grants-in-aid
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0047088
Reference55 articles.
1. Semiconductors for high‐voltage, vertical channel field‐effect transistors
2. Gallium nitride devices for power electronic applications
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4. GaN-based semiconductor devices for future power switching systems
5. Band offsets of high K gate oxides on III-V semiconductors
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