MIT virtual source GaNFET-RF compact model for GaN HEMTs: From device physics to RF frontend circuit design and validation-Reference-Cited by-同舟云学术

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MIT virtual source GaNFET-RF compact model for GaN HEMTs: From device physics to RF frontend circuit design and validation

Published:2014-12 Issue: Volume: Page:
ISSN:
Container-title:2014 IEEE International Electron Devices Meeting
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Author:

Radhakrishna Ujwal,Choi Pilsoon,Goswami Sushmit,Li-Shiuan Peh ,Palacios Tomas,Antoniadis Dimitri

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7038718/7046955/07047034.pdf?arnumber=7047034

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Nonlinear behavioral analysis of diode model using Volterra series;Microwave and Optical Technology Letters;2024-07

2. A Comprehensive Model for Gate Current in E-Mode p-GaN HEMTs;IEEE Transactions on Electron Devices;2024-03

3. A New Vision of the Role Played by Buffer Dopants on the Operation of AlGaN/GaN HEMTs;2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits (INMMIC);2023-11-08

4. Compact Modeling of N-Polar GaN HEMTs for Intermodulation Distortion in Millimeter-Wave Bands;IEEE Transactions on Microwave Theory and Techniques;2023-05

5. Scalable Charge-Based Compact Model for Drain Current in Fin-Shaped GaN HEMTs;IEEE Transactions on Electron Devices;2023-03

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