Quantitative and predictive model of reading current variability in deeply scaled vertical poly-Si channel for 3D memories
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/6471855/6478950/06479009.pdf?arnumber=6479009
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Depassivation of Traps in the Polysilicon Channel of 3D NAND Flash Arrays: Impact on Cell High-Temperature Data Retention;2023 IEEE International Reliability Physics Symposium (IRPS);2023-03
2. Analysis of High-Temperature Data Retention in 3D Floating-Gate nand Flash Memory Arrays;IEEE Journal of the Electron Devices Society;2023
3. Channel Thickness and Grain Size Engineering for Improvement of Variability and Performance in 3-D NAND Flash Memory;IEEE Transactions on Electron Devices;2022-07
4. Toward 7 Bits per Cell: Synergistic Improvement of 3D Flash Memory by Combination of Single-crystal Channel and Cryogenic Operation;2022 IEEE International Memory Workshop (IMW);2022-05
5. Random Telegraph Noise Intensification After High-Temperature Phases in 3-D NAND Flash Arrays;IEEE Electron Device Letters;2022-04
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