2D molybdenum disulfide (MoS2) transistors driving RRAMs with 1T1R configuration
Author:
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/8255107/8268301/08268423.pdf?arnumber=8268423
Cited by 10 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. A Consistent Model for Gradual, Abrupt, and Abnormal Reset Phenomena in Bipolar/Unipolar Metal Oxide RRAMs;IEEE Transactions on Electron Devices;2024-05
2. Fully Integrated 3-D Stackable CNTFET/RRAM 1T1R Array as BEOL Buffer Macro for Monolithic 3-D Integration With Analog RRAM-Based Computing-in-Memory;IEEE Transactions on Electron Devices;2024-05
3. Monolithic 3D integration of 2D transistors and vertical RRAMs in 1T–4R structure for high-density memory;Nature Communications;2023-09-23
4. Van der Waals Layer Transfer of 2D Materials for Monolithic 3D Electronic System Integration: Review and Outlook;ACS Nano;2023-01-19
5. Cross-layer Designs against Non-ideal Effects in ReRAM-based Processing-in-Memory System;2022 23rd International Symposium on Quality Electronic Design (ISQED);2022-04-06
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