A Consistent Model for Gradual, Abrupt, and Abnormal Reset Phenomena in Bipolar/Unipolar Metal Oxide RRAMs-Reference-Cited by-同舟云学术

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A Consistent Model for Gradual, Abrupt, and Abnormal Reset Phenomena in Bipolar/Unipolar Metal Oxide RRAMs

Published:2024-05 Issue:5 Volume:71 Page:3142-3149
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Jia Yueyang¹^ORCID,Shen Sheng¹^ORCID,Xie Maosong¹^ORCID,Zhang Pengcheng¹^ORCID,Shen Minliang¹^ORCID,Yang Rui²^ORCID

Affiliation:

1. University of Michigan–Shanghai Jiao Tong University Joint Institute, Shanghai Jiao Tong University, Shanghai, China

2. University of Michigan–Shanghai Jiao Tong University Joint Institute and the State Key Laboratory of Radio Frequency Heterogeneous Integration, Shanghai Jiao Tong University, Shanghai, China

Funder

National Natural Science Foundation of China

Science and Technology Commission of Shanghai Municipality

Lingang Laboratory

Natural Science Foundation of Chongqing Municipality

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10508280/10494830.pdf?arnumber=10494830

Reference36 articles.

1. Metal–Oxide RRAM

2. Neuro-inspired Computing Using Resistive Synaptic Devices

3. Improving Analog Switching in HfOx-Based Resistive Memory With a Thermal Enhanced Layer

4. HfO₂-Based RRAM: Electrode Effects, Ti/HfO₂ Interface, Charge Injection, and Oxygen (O) Defects Diffusion Through Experiment and Ab Initio Calculations

5. A Compact Model of Analog RRAM With Device and Array Nonideal Effects for Neuromorphic Systems

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