High-mobility 0.85nm-EOT Si<inf>0.45</inf>Ge<inf>0.55</inf>-pFETs: Delivering high performance at scaled VDD-Reference-Cited by-同舟云学术

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High-mobility 0.85nm-EOT Si0.45Ge0.55-pFETs: Delivering high performance at scaled VDD

Published:2010-12 Issue: Volume: Page:
ISSN:
Container-title:2010 International Electron Devices Meeting
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Author:

Mitard J.,Witters L.,Bardon M. Garcia,Christie P.,Franco J.,Mercha A.,Magnone P.,Alioto M.,Crupi F.,Ragnarsson L.-A.,Hikavyy A.,Vincent B.,Chiarella T.,Loo R.,Tseng J.,Yamaguchi S.,Takeoka S.,Wang W-E.,Absil P.,Hoffmann T.

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/5692854/5703218/05703337.pdf?arnumber=5703337

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Understanding the Mechanism of Electronic Defect Suppression Enabled by Nonidealities in Atomic Layer Deposition;Journal of the American Chemical Society;2019-11-28

2. Observation and understanding of anisotropic strain relaxation in selectively grown SiGe fin structures;Nanotechnology;2017-03-09

3. Introduction;Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications;2013-10-19

4. NBTI in (Si)Ge Channel Devices;Bias Temperature Instability for Devices and Circuits;2013-09-10

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