Heteroepitaxial growth and power electronics using AlGaN/GaN HEMT on Si-Reference-Cited by-同舟云学术

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Heteroepitaxial growth and power electronics using AlGaN/GaN HEMT on Si

Published:2012-12 Issue: Volume: Page:
ISSN:
Container-title:2012 International Electron Devices Meeting
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Author:

Egawa Takashi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/6471855/6478950/06479112.pdf?arnumber=6479112

Cited by 18 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Correlation of heat transport mechanism and structural properties of GaN high electron mobility transistors;Journal of Applied Physics;2024-07-23

2. Methodology for Evaluating 2DEG Carrier Behavior in High-Frequency Bands in AlGaN/GaN HEMTs;TENCON 2023 - 2023 IEEE Region 10 Conference (TENCON);2023-10-31

3. Improved reverse-bias breakdown behavior in fully-vertical GaN-on-Si Schottky barrier diodes with a thin AlN layer within the GaN drift layer;Semiconductor Science and Technology;2023-08-03

4. Admittance frequency dispersion in lateral AlGaN/GaN Schottky barrier diodes: Other origins of two Gp/ω peaks;Journal of Applied Physics;2023-02-24

5. Process of Au-Free Source/Drain Ohmic Contact to AlGaN/GaN HEMT;Crystals;2022-06-10

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