Methodology for Evaluating 2DEG Carrier Behavior in High-Frequency Bands in AlGaN/GaN HEMTs
Author:
Affiliation:
1. Shool of Engnnerting, Chukyo University,Depertment of Electrical and Electnic Engnnering,Nagoya,JAPAN
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10322307/10322308/10322353.pdf?arnumber=10322353
Reference17 articles.
1. Analysis of Drain Current Transient Response of Gate Pulse Voltage in AlGaN / GaN High Electron Mobility Transistors
2. An Overview on Analyses and Suppression Methods of Trapping Effects in AlGaN/GaN HEMTs
3. Electron Trapping in Extended Defects in Microwave AlGaN/GaN HEMTs With Carbon-Doped Buffers
4. Effect of Reduced Extended Defect Density in MOCVD Grown AlGaN/GaN HEMTs on Native GaN Substrates
5. Current-Collapse Suppression of High-Performance Lateral AlGaN/GaN Schottky Barrier Diodes by a Thick GaN Cap Layer
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