Linear and Periodic State Integrated Circuits Noise Simulation Benchmarking
Author:
Affiliation:
1. Aristotle University of Thessaloniki,Department of Physics,Thessaloniki,Greece
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9939277/9939284/09939575.pdf?arnumber=9939575
Reference18 articles.
1. A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors
2. Model for 1/f; noise in MOS transistors biased in the linear region
3. Extraction of the induced gate noise, channel noise, and their correlation in submicron MOSFETs from RF noise measurements
4. MOSFET gate induced time domain noise simulation accuracy benchmarking
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1. A Hybrid GA/ML-Based End-to-End Automated Methodology for Design Acceleration of Wireless Communications CMOS LNAs;Electronics;2023-05-27
2. CMOS Noise Analysis and Simulation From Low Frequency and Baseband to RF and Millimeter Wave;IEEE Access;2023
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