MOSFET gate induced time domain noise simulation accuracy benchmarking
Author:
Affiliation:
1. Electronics Laboratory, Physics DepartmentAristotle University of ThessalonikiThessaloniki54124Greece
Publisher
Institution of Engineering and Technology (IET)
Subject
Electrical and Electronic Engineering
Link
https://onlinelibrary.wiley.com/doi/pdf/10.1049/el.2015.3278
Reference7 articles.
1. Noise analysis and simulation method for a single‐slope ADC with CDS in a CMOS image sensor;Cheon J.;IEEE Trans. Circuits Syst. I, Regul. Pap.,2008
2. Time‐domain non‐Monte Carlo noise simulation for nonlinear dynamic circuits with arbitrary excitations;Demir A.;IEEE Trans. Comput. Aided Des. Integr. Circuits Syst.,1996
3. Time‐domain modeling of low‐frequency noise in deep‐submicrometer MOSFET;Hamid N.H.;IEEE Trans. Circuits Syst. I, Regul. Pap.,2008
4. BSIM4v4.7 MOSFET Model User's manual UC Berkeley 2011
5. Mosfet Models for Spice Simulation, Including BSIM3v3 and BSIM4
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